Nanometrics

Study of Deep Ultra Violet Optical Property of AlGaN/GaN 2DEG Heterostructures

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AlGaN/GaN material system has attracted tremendous interest from high electron mobility transistors (HEMTs) to deep ultra violet (DUV) light emitting diode (LED). GaN on silicon has drawn some substantial attention due to the huge market potential and possibly being able to be integrated with well-developed silicon microelectronics industry.

 

By using a DUV laser, Nanometrics’ RPMBlue-FS is able to accurately measure Al composition on UV LED samples from 230nm up to 330nm. Some special sample structures including surface quantum well would prevent PL from distinguishing a valid AlGaN recombination, while DUV PR technique is successfully used to determine Al composition. A commercially available PL and PR full wafer mapping metrology tool is developed for first time for DUV applications.


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Meet the developers of the RPMBlue-FS at the ICNS-11 Conference being held from August 31 - September 4, 2015 in Beijing, China.

 

Nanometrics will be presenting its paper on Monday, August 31. Nanometrics exhibit hall presence is represented by Quatek. [MoEO13. 17:35 - 17:50. August 31. Study of Deep Ultra Violet Optical Property of AlGaN/GaN 2DEG Heterostructures.]

 

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